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DS1230AB-P70 Просмотр технического описания (PDF) - Dallas Semiconductor -> Maxim Integrated
Номер в каталоге
Компоненты Описание
производитель
DS1230AB-P70
256k Nonvolatile SRAM
Dallas Semiconductor -> Maxim Integrated
DS1230AB-P70 Datasheet PDF : 12 Pages
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CAPACITANCE
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN
TYP
5
5
MAX
10
10
DS1230Y/AB
(t
A
=25
°
C)
UNITS NOTES
pF
pF
AC ELECTRICAL
CHARACTERISTICS
PARAMETER SYMBOL
(V
CC
=5V
±
=
5% for DS1230AB)
(t
A
: See Note 10) (V
CC
=5V
±
=
10% for DS1230Y)
DS1230AB-70 DS1230AB-85 DS1230AB-100
DS1230Y-70 DS1230Y-85 DS1230Y-100
UNITS NOTES
MIN MAX MIN MAX MIN MAX
Read Cycle
t
RC
70
85
100
ns
Time
Access Time
t
ACC
70
85
100
ns
OE
to Output
t
OE
Valid
35
45
50
ns
CE
to Output
t
CO
Valid
70
85
100
ns
OE
or
CE
to
t
COE
5
5
5
Output Active
ns
5
Output High Z
t
OD
from
Deselection
25
30
35
ns
5
Output Hold
t
OH
5
5
5
ns
from Address
Change
Write Cycle
t
WC
70
85
100
ns
Time
Write Pulse
t
WP
55
65
75
Width
ns
3
Address Setup
t
AW
0
0
0
ns
Time
Write Recovery t
WR1
5
5
5
Time
t
WR2
15
15
15
ns
12
13
Output High Z
from
WE
t
ODW
25
30
35
ns
5
Output Active
t
OEW
5
5
5
from
WE
ns
5
Data Setup
t
DS
30
35
40
Time
ns
4
Data Hold
t
DH1
0
0
0
Time
t
DH2
10
10
10
ns
12
13
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