DG183 Просмотр технического описания (PDF) - Vishay Semiconductors
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DG183 Datasheet PDF : 9 Pages
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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
DG183/184/185
Vishay Siliconix
ID(off) vs. Temperature (DG184/185)
100
V+ = 10 V, V– = –20 V
VD = –10 V, VS = 10 V
10
B Suffix
1
A Suffix
0.1
25
45
65
85
105
125
Temperature (_C)
Capacitance vs. VD or VS (DG184/185)
20
18
VINL = 0.8 V
VINH = 2 V
f = 1 MHz
16
CD(on)
14
12
10
CS(off)
8
6
CD(off)
4
Capacitance is measured from test terminal
2 to common.
0
–10 –8 –6 –4 –2 0 2
46
8 10
VD or VS – Drain or Source Voltage (V)
Capacitance vs. VD or VS (DG183)
30
f = 1 MHz
26
22
CS(off)
18
CD(on)
14
CD(off)
10
–8
–4
0
4
8
VD or VS – Drain or Source Voltage (V)
Off Isolation vs. Frequency
100
90
80
DG184/185
70
DG183
60
50
40
30
V+ = 15 V, V– = –15 V
VR = 0, VL = 5 V
20
RL = 75 W
VIN w 220 mVRMS
10
0
105
106
107
108
f – Frequency (Hz)
Document Number: 70032
S-52895—Rev. D, 16-Jun-97
www.vishay.com S FaxBack 408-970-5600
4-7
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