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CY7C197BN Просмотр технического описания (PDF) - Cypress Semiconductor

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Компоненты Описание
производитель
CY7C197BN
Cypress
Cypress Semiconductor Cypress
CY7C197BN Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
CY7C197BN
Maximum Ratings
Exceeding the maximum rating may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on VCC to Relative GND........ –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[2] .....................................–0.5V to VCC +0.5V
DC Input Voltage[2]..................................–0.5V to VCC +0.5V
DC Electrical Characteristics[2]
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage...............................................2001V
(per MIL-STD-883, Method 3015)
Latch Up Current ..................................................... >200 mA
Operating Range
Range
Ambient
Temperature[3]
Commercial
0°C to 70°C
VCC
5.0V ± 10%
Parameter
Description
Condition
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
VOH
Output HIGH Voltage
VCC = Min, IOH = –4.0 mA
VOL
Output LOW Voltage
VCC = Min, lol = 8.0 mA
IOZ
Output Leakage Current GND Vi VCC, Output
Disabled
IIX
Input Leakage Current GND Vi VCC
ICC
VCC Operating Supply VCC = Max, IOUT = 0 mA,
Current
f = FMAX = 1/tRC
ISB1
Automatic CE Power
VCC = Max,
Down Current TTL Inputs CE VIH, VIN VIH or
VIN VIL, f = FMAX
ISB2
Automatic CE Power
VCC = Max,
Down Current CMOS
Inputs
CE VCC – 0.3V,
VIN VCC – 0.3V or
VIN < 0.3V, f = 0
12 and 15 ns
Min
Max
2.2
–0.3
VCC+0.3
0.8
2.4
0.4
–5
+5
25 ns
Unit
Min
Max
2.2
VCC+0.3 V
–0.3
0.8
V
2.4
V
0.4
V
–5
+5
µA
–5
+5
–5
150
+5
µA
95
mA
30
30
mA
10
10
mA
Capacitance[4]
Parameter
CIN
COUT
Description
Input Capacitance
Output Capacitance
Conditions
TA = 25C, f = 1 MHz,
VCC = 5.0V
Max (ALL – PACKAGES)
8
10
Unit
pF
Thermal Resistance[4]
Parameter
ΘJA
ΘJC
Description
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Conditions
Still Air, soldered on a 3 x 4.5
square inches, two-layer
printed circuit board
24 DIP
75.69
33.80
24 SOJ
84.15
37.56
Unit
°C/W
Notes
2. VIL(min) = –2.0V for pulse durations of less than 20 ns.
3. TA is the “instant on” case temperature
4. Tested initially and after any design or process change that may affect these parameters
Document #: 001-06447 Rev. **
Page 3 of 9
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