BCR30GM Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
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производитель
BCR30GM Datasheet PDF : 5 Pages
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ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE BLACK PAINTED
140 ALUMINUM AND GREASED
NATURAL CONVECTION
120
80 80 t4.0
100
120 120 t3.0
160 160 t3.0
80
CURVES APPLY
60
REGARDLESS
OF CONDUCTION
40
ANGLE
20
0
0
10
20
30
40
RMS ON-STATE CURRENT (A)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
103
7
TYPICAL EXAMPLE
5
4
3
2
102
7
5
4
3
2
101
–60–40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140
Tj = 125°C
120
100
80
I QUADRANT
60
40
III QUADRANT
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR30GM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
105
7
TYPICAL EXAMPLE
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60–40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
COMMUTATION CHARACTERISTICS
102
7 MINIMUM
5 CHARAC-
4 TERISTICS
3 VALUE
2
TYPICAL
EXAMPLE
TC = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
101
7
5
4
3
I QUADRANT
2
III QUADRANT
100
101 2 3 4 5 7 102
2 3 4 5 7 103
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
Feb.1999
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