CM1622 Просмотр технического описания (PDF) - ON Semiconductor

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CM1622

LCD and Camera EMI Filter Array with ESD Protection

ON Semiconductor 

CM1622

ELECTRICAL OPERATING CHARACTERISTICS (NOTE1)

SYMBOL PARAMETER

R

Resistance

C

Total Channel Capacitance

TOTAL

C

Capacitance C

VDIODE

ILEAK

VSIG

Standoff Voltage

Diode Leakage Current (reverse bias)

Signal Clamp Voltage

CONDITIONS

IR= 20mA

At 2.5VDC Reverse Bias, 1MHz,

30mVAC

MIN TYP

85 100

20 25

MAX

115

UNITS

Ω

30

pF

At 2.5VDC Reverse Bias, 1MHz,

12.5

pF

30mVAC

I = 10μA

DIODE

+ V = DIODE 3.3V

ILOAD = 1.0mA

6.0

V

0.01 0.2

μA

6.0 7.0 8.0

V

VESD In-system ESD Withstand Voltage

See Note 2

a) Human Body Model, MIL-STD-883,

Method 3015

b) Contact Discharge per IEC 61000-4-

2 Level 4

RDYN

Dynamic Resistance

Positive

Negative

f

Cut-off Frequency

C

Z = 50Ω, Z = 50Ω

SOURCE

LOAD

Channel R = 100Ω,

Channel C = 25pF

A

1GHz

Absolute Attenuation @ 1GHz from 0dB

Level

A

Absolute Attenuation @ 800MHz to

800MHz - 6GHz

6GHz from 0dB Level

ZSOURCE = 50Ω, Z LOAD = 50Ω,

DC Bias = 0V;

See Notes 1 and 3.

ZSOURCE = 50Ω, Z LOAD = 50Ω,

DC Bias = 0V;

See Notes 1 and 3.

Note 1: TA=25°C unless otherwise specified.

Note 2: ESD applied to input and output pins with respect to GND, one at a time.

Note 3: Attenuation / RF curves characterized by a network analyzer using microprobes.

±30

±15

2.3

0.9

115

-35

30

kV

kV

Ω

Ω

MHz

dB

dB

Rev.2 | Page 4 of 12 | www.onsemi.com

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