Philips Semiconductors
Controlled avalanche rectifiers
Product specification
BAS11; BAS12
handbook1, 0h2alfpage
IR
(µA)
10
MGD297
10
handbook, halfpage
Cd
(pF)
MGD296 - 1
1
10−1
0
50
100
150
200
Tj (oC)
VR = VRRMmax.
Fig.6 Reverse current as a function of junction
temperature; maximum values.
1
10−1
1
10
102 VR(V) 103
f = 1 MHz; Tj = 25 °C.
Fig.7 Diode capacitance as a function of reverse
voltage; typical values.
50
handbook, halfpage
25
7
50
2
3
MGA200
Dimensions in mm.
Fig.8 Device mounted on a printed-circuit board.
1996 Sep 26
5
Not recommended for new designs