BYW51-200 Просмотр технического описания (PDF) - ON Semiconductor

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BYW51-200

SWITCHMODE Power Rectifier

ON Semiconductor 

BYW51−200

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current

TC = 156°C

Per Leg

Total Device

VRRM

VRWM

VR

IF(AV)

200

V

A

8.0

16

Peak Rectified Forward Current

(Square Wave, 20 kHz),

TC = 153°C − Per Diode Leg

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFM

IFSM

16

A

100

A

Operating Junction Temperature and Storage Temperature

TJ, Tstg

−65 to +175

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

THERMAL CHARACTERISTICS

Characteristic

Maximum Thermal Resistance, Junction−to−Case

Maximum Thermal Resistance, Junction−to−Ambient

Conditions

Min. Pad

Min. Pad

Symbol

RqJC

RqJA

Value

3.0

60.0

Unit

°C/W

ELECTRICAL CHARACTERISTICS

Characteristic

Instantaneous Forward Voltage (Note 1)

(iF = 8.0 A, Tj = 100°C)

(iF = 8.0 A, Tj = 25°C)

Maximum Instantaneous Reverse Current (Note 1)

(Rated dc Voltage, Tj = 100°C)

(Rated dc Voltage, Tj = 25°C)

Maximum Reverse Recovery Time

(IF = 1.0 A, di/dt = 50 A/s)

(IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A)

1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%

Symbol

vF

iR

trr

Min

Typical Max Unit

V

−

0.8

0.89

−

0.89 0.97

mA

−

21

1000

−

3.8

10

ns

−

−

35

25

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