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BS616LV1623TIP70 Просмотр технического описания (PDF) - Brilliance Semiconductor
Номер в каталоге
Компоненты Описание
производитель
BS616LV1623TIP70
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
Brilliance Semiconductor
BS616LV1623TIP70 Datasheet PDF : 10 Pages
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BSI
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1
(1,2,4)
t
RC
ADDRESS
t
AA
t
OH
D
OUT
READ CYCLE2
(1,3,4)
CE2
CE1
D
OUT
t
ACS2
t
ACS1
(5)
t
CLZ
READ CYCLE3
(1,4)
ADDRESS
OE
CE2
CE1
LB,UB
t
RC
t
AA
t
OE
t
ACS2
t
OLZ
t
ACS1
(5)
t
CLZ
t
BE
t
BA
D
OUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = V
IL
and CE2 = V
IH
.
3. Address valid prior to or coincident with CE1 transition low and CE2 transition high.
4. OE = V
IL
.
5. The parameter is guaranteed but not 100% tested.
BS616LV1623
t
OH
t
(5)
CHZ
t
OH
t
(5)
OHZ
t
(1,5)
CHZ
t
BDO
R0201-BS616LV1623
7
Revision 1.1
Jan. 2004
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