Philips Semiconductors
BGA2716
MMIC wideband amplifier
0
| s12 | 2
(dB)
− 20
− 40
001aab259
30
| s21| 2
(dB)
20
10
001aab260
(2)
(1)
(3)
− 60
0
1000
2000
3000
4000
f (MHz)
IS = 15.9 mA; VS = 5 V; PD = −35 dBm; Zo = 50 Ω.
Fig 8. Isolation (s122) as a function of frequency;
typical values.
20
PL
(dBm)
10
001aab261
(1)
(2)
(3)
0
0
0
1000
2000
3000
4000
f (MHz)
PD = −35 dBm; Zo = 50 Ω.
(1) IS = 19.5 mA; VS = 5.5 V.
(2) IS = 15.9 mA; VS = 5 V.
(3) IS = 12.4 mA; VS = 4.5 V.
Fig 9. Insertion gain (s212) as a function of
frequency; typical values.
20
PL
(dBm)
10
0
001aab262
(1)
(2)
(3)
−10
−10
− 20
− 40
− 30
− 20
− 10
0
PD (dBm)
f = 1 GHz; Zo = 50 Ω.
(1) VS = 5.5 V.
(2) VS = 5 V.
(3) VS = 4.5 V.
Fig 10. Load power as a function of drive power at
1 GHz; typical values.
− 20
− 40
− 30
− 20
− 10
0
PD (dBm)
f = 2.2 GHz; Zo = 50 Ω.
(1) VS = 5.5 V.
(2) VS = 5 V.
(3) VS = 4.5 V.
Fig 11. Load power as a function of drive power at
2.2 GHz; typical values.
9397 750 13292
Product data sheet
Rev. 02 — 24 September 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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