BFR520 Просмотр технического описания (PDF) - Philips Electronics
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BFR520 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR520
handboo4k,0h0alfpage
Ptot
(mW)
300
MRA702 - 1
200
100
0
0
50
100
150
200
Ts (o C)
Fig.2 Power derating curve.
250
handbook, halfpage
hFE
200
MRA703
150
100
50
010−2
10−1
1
10 IC (mA) 102
VCE = 6 V.
Fig.3 DC current gain as a function of collector
current.
0.6
handbook, halfpage
Cre
(pF)
0.4
0.2
MRA704
handbook1,2halfpage
fT
(GHz)
8
4
MRA705
VCE = 6V
VCE = 3V
0
0
4
8 VCB (V) 12
iC = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage.
September 1995
0
10−1
1
Tamb = 25 °C; f = 1 GHz.
10 IC (mA) 102
Fig.5 Transition frequency as a function of
collector current.
5
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