BFR520 Просмотр технического описания (PDF) - Philips Electronics
Номер в каталоге
Компоненты Описание
производитель
BFR520 Datasheet PDF : 12 Pages
| |||
Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR520
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
telephones (CT1, CT2, DECT, etc.),
radar detectors, pagers and satellite
TV tuners (SATV) and repeater
amplifiers in fibre-optic systems.
The transistor is encapsulated in a
fpage
plastic SOT23 envelope.
DESCRIPTION
The BFR520 is an npn silicon planar
epitaxial transistor, intended for
applications in the RF frontend in
wideband applications in the GHz
range, such as analog and digital
cellular telephones, cordless
PINNING
PIN
DESCRIPTION
Code: N28
1 base
2 emitter
3 collector
3
1
Top view
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCES
IC
Ptot
hFE
Cre
fT
GUM
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
S212
F
insertion power gain
noise figure
RBE = 0
up to Ts = 97 °C; note 1
IC = 20 mA; VCE = 6 V
IC = ic = 0; VCB = 6 V; f = 1 MHz
IC = 20 mA; VCE = 6 V; f = 1 GHz
IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
Γs = Γopt; IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
Γs = Γopt; IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
Γs = Γopt; IC = 5 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
Note
1. Ts is the temperature at the soldering point of the collector tab.
MIN. TYP. MAX. UNIT
−
−
20 V
−
−
15 V
−
−
70 mA
−
−
300 mW
60 120 250
−
0.4 −
pF
−
9
−
GHz
−
15 −
dB
−
9
−
dB
13 14 −
dB
−
1.1 1.6 dB
−
1.6 2.1 dB
−
1.9 −
dB
September 1995
2
Share Link: 