BFG540W Просмотр технического описания (PDF) - Philips Electronics
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BFG540W Datasheet PDF : 16 Pages
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Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG540W
BFG540W/X; BFG540W/XR
30
handbook, halfpage
gain
(dB)
20
MSG
10
MLC045
G max
GUM
0
0
10
20
30
40
50
IC (mA)
f = 900 MHz; VCE = 8 V.
Fig.7 Gain as a function of collector current;
typical values.
30
handbook, halfpage
gain
(dB)
20
MLC046
10
G max
GUM
0
0
10
20
30
40
50
IC (mA)
f = 2 GHz; VCE = 8 V.
Fig.8 Gain as a function of collector current;
typical values.
50
handgboaoink, halfpage
(dB)
40
G UM
MSG
30
20
10
0
10
102
MLC047
G max
103
104
f (MHz)
50
handgboaoink, halfpage
(dB)
40
G UM
MSG
30
20
10
0
10
102
MLC048
G max
103
104
f (MHz)
IC = 10 mA; VCE = 8 V.
Fig.9 Gain as a function of frequency;
typical values.
1997 Dec 04
IC = 40 mA; VCE = 8 V.
Fig.10 Gain as a function of frequency;
typical values.
6
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