BFG540W Просмотр технического описания (PDF) - Philips Electronics
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BFG540W Datasheet PDF : 16 Pages
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Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG540W
BFG540W/X; BFG540W/XR
CHARACTERISTICS
Tj = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
V(BR)CBO
V(BR)CES
V(BR)EBO
ICBO
hFE
fT
collector-base breakdown
voltage
collector-emitter breakdown
voltage
emitter-base breakdown
voltage
collector cut-off current
DC current gain
transition frequency
Cc
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
GUM
maximum unilateral power
gain; note 1
|s21|2
F
insertion power gain
noise figure
PL1
output power at 1 dB gain
compression
ITO
third order intercept point
Vo
output voltage
d2
second order intermodulation
distortion
CONDITIONS
open emitter; IC = 10 µA ; IE = 0
MIN. TYP. MAX. UNIT
20
−
−
V
RBE = 0; IC = 40 µA
15
−
−
V
open collector; IE = 100 µA; IC = 0 2.5
−
−
V
open emitter; VCB = 8 V; IE = 0
−
IC = 40 mA; VCE = 8 V
60
IC = 40 mA; VCE = 8 V; f = 1 GHz; −
Tamb = 25 °C
IE = ie = 0; VCB = 8 V; f = 1 MHz
−
IC = ic = 0; VEB = 0.5 V; f = 1 MHz −
IC = 0; VCB = 8 V; f = 1 MHz
−
IC = 40 mA; VCE = 8 V; f = 900 MHz; −
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 2 GHz; −
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 900 MHz; 14
Tamb = 25 °C
Γs = Γopt; IC = 10 mA; VCE = 8 V;
−
f = 900 MHz
Γs = Γopt; IC = 40 mA; VCE = 8 V;
−
f = 900 MHz
Γs = Γopt; IC = 10 mA; VCE = 8 V;
−
f = 2 GHz
IC = 40 mA; VCE = 8 V; f = 900 MHz; −
RL = 50 Ω; Tamb = 25 °C
note 2
−
note 3
−
note 4
−
−
50
nA
120 250
9
−
GHz
0.9
−
pF
2
−
pF
0.5
−
pF
16
−
dB
10
−
dB
15
−
dB
1.3 1.8 dB
1.9 2.4 dB
2.1
−
dB
21
−
dBm
34
−
500 −
−50 −
dBm
mV
dB
Notes
1. GUM is the maximum unilateral power gain, assuming s12 is zero. GUM
2. IC = 40 mA; VCE = 8 V; RL = 50 Ω; Tamb = 25 °C;
=
10
log --(--1-----–------s---1---1----2s---)-2--1-(---1-2----–------s---2--2-----2---)-
dB.
a) fp = 900 MHz; fq = 902 MHz; measured at f(2p − q) = 898 MHz and f(2q − p) = 904 MHz.
3. dim = −60 dB (DIN45004B); Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB; RL = 75 Ω; VCE = 8 V; IC = 40 mA;
a) fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p + q − r) = 793.25 MHz.
4. IC = 40 mA; VCE = 8 V; Vo = 275 mV; RL = 75 Ω; Tamb = 25 °C;
a) fp = 250 MHz; fq = 560 MHz; measured at f(p + q) = 810 MHz.
1997 Dec 04
4
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