BFG540W Просмотр технического описания (PDF) - Philips Electronics

Номер в каталоге

Компоненты Описание

производитель

BFG540W

NPN 9 GHz wideband transistor

Philips Electronics 

Philips Semiconductors

NPN 9 GHz wideband transistor

Product specification

BFG540W

BFG540W/X; BFG540W/XR

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCES

VEBO

IC

Ptot

Tstg

Tj

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

total power dissipation

storage temperature

junction temperature

open emitter

RBE = 0

open collector

up to Ts = 85 °C; see Fig.3; note 1

MIN.

−

−

−

−

−

−65

−

MAX.

20

15

2.5

120

500

+150

175

UNIT

V

V

V

mA

mW

°C

°C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-s

thermal resistance from junction to soldering point up to Ts = 85 °C; note 1

Note to the “Limiting values” and “Thermal characteristics”

1. Ts is the temperature at the soldering point of the collector pin.

VALUE

180

UNIT

K/W

600

handbook, halfpage

P tot

(mW)

400

MBG248

200

0

0

50

100

150

Ts

(o C) 200

VCE ≤ 10 V.

Fig.3 Power derating curve.

1997 Dec 04

3

Share Link: