BF994 Просмотр технического описания (PDF) - Philips Electronics
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BF994 Datasheet PDF : 5 Pages
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Philips Semiconductors
N-channel dual-gate MOS-FET
Product specification
BF994S
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IG1-SS
IG2-SS
V(BR)G1-SS
V(BR)G2-SS
IDSS
V(P)G1-S
V(P)G2-S
gate 1 cut-off currents
gate 2 cut-off currents
gate 1-source breakdown voltage
gate 2-source breakdown voltage
drain-source cut-off voltage
gate 1-source cut-off voltage
gate 2-source cut-off voltage
VG1-S = ±5 V; VG2-S = VDS = 0
VG2-S = ±5 V; VG1-S = VDS = 0
IG1-SS = ±10 mA; VG2-S = VDS = 0
IG2-SS = ±10 mA; VG1-S = VDS = 0
VDS = 15 V; VG1-S = 0; VG2-S = 4 V
ID = 20 µA; VDS = 15 V; VG2-S = 4 V
ID = 20 µA; VDS = 15 V; VG1-S = 0
MIN.
−
−
±6
±6
4
−
−
MAX. UNIT
±50 nA
±50 nA
±20 V
±20 V
20
mA
−2.5 V
−2
V
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): ID = 10 mA; VDS = 15 V; VG2-S = 4 V; Tamb = 25 °C.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Yfs
Cig1-s
Cig2-s
Crs
Cos
F
Gp
transfer admittance
f = 1 kHz
15
18
−
mS
input capacitance at gate 1 f = 1 MHz
−
2.5 3
pF
input capacitance at gate 2 f = 1 MHz
−
1.2 −
pF
feedback capacitance
f = 1 MHz
−
25
−
fF
output capacitance
f = 1 MHz
−
1
−
pF
noise figure
f = 200 MHz; GS = 2 mS; BS = BSopt −
1
−
dB
power gain
f = 200 MHz; GS = 2 mS; BS = BSopt; −
25
−
dB
GL = 0.5 mS; BL = BLopt
July 1993
4
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