BF1207 Просмотр технического описания (PDF) - NXP Semiconductors.
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BF1207 Datasheet PDF : 23 Pages
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NXP Semiconductors
BF1207
Dual N-channel dual gate MOSFET
102
bis, gis
(mS)
10
1
10−1
001aac890
bis
gis
102
|yfs|
(mS)
10
001aac891 −102
|yfs|
ϕfs
(deg)
−10
ϕfs
10−2
10
102
103
f (MHz)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V;
ID(A) = 18 mA.
Fig 12. Amplifier A: input admittance as a function of
frequency; typical values
1
−1
10
102
103
f (MHz)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V;
ID(A) = 18 mA.
Fig 13. Amplifier A: forward transfer admittance and
phase as a function of frequency; typical
values
103
|yrs|
(μS)
102
001aac892 −103
ϕrs
(deg)
ϕrs
−102
10
bos, gos
(mS)
1
001aac893
bos
|yrs|
10
−10
10−1
gos
1
−1
10
102
103
f (MHz)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V;
ID(A) = 18 mA.
Fig 14. Amplifier A: reverse transfer admittance and
phase as a function of frequency: typical
values
10−2
10
102
103
f (MHz)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V;
ID(A) = 18 mA.
Fig 15. Amplifier A: output admittance as a function of
frequency; typical values
BF1207
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 7 September 2011
© NXP B.V. 2011. All rights reserved.
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