BF1100 Просмотр технического описания (PDF) - NXP Semiconductors.
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производитель
BF1100 Datasheet PDF : 15 Pages
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NXP Semiconductors
Dual-gate MOS-FETs
Product specification
BF1100; BF1100R
Table 1 Scattering parameters: VDS = 9 V; VG2-S = 4 V; ID = 10 mA
f
(MHz)
s11
MAGNITUDE
(ratio)
ANGLE
(deg)
s21
MAGNITUDE
(ratio)
ANGLE
(deg)
s12
MAGNITUDE
(ratio)
50
100
200
300
400
500
600
700
800
900
1 000
0.986
0.983
0.974
0.960
0.953
0.933
0.915
0.895
0.880
0.864
0.839
−3.6
−7.4
−14.7
−21.8
−28.7
−35.4
−42.0
−47.9
−53.5
−59.6
−65.0
2.528
2.531
2.490
2.446
2.412
2.341
2.283
2.205
2.146
2.087
1.998
174.4
169.8
159.5
149.8
139.8
130.1
120.4
111.6
102.9
93.4
84.4
0.001
0.001
0.002
0.002
0.003
0.003
0.004
0.003
0.003
0.003
0.003
ANGLE
(deg)
63.7
80.7
81.0
80.3
76.3
76.5
79.0
81.5
90.8
106.6
135.4
s22
MAGNITUDE
(ratio)
1.000
1.000
0.996
0.994
0.992
0.987
0.984
0.981
0.978
0.974
0.971
ANGLE
(deg)
−2.0
−4.2
−8.1
−11.9
−15.7
−19.4
−23.0
−26.7
−30.3
−33.9
−37.6
Table 2 Noise data: VDS = 9 V; VG2-S = 4 V; ID = 10 mA
f
(MHz)
Fmin
(dB)
Γopt
(ratio)
800
2.00
0.67
(deg)
43.9
rn
0.89
Table 3 Scattering parameters: VDS = 12 V; VG2-S = 4 V; ID = 10 mA
f
(MHz)
s11
MAGNITUDE
(ratio)
ANGLE
(deg)
s21
MAGNITUDE
(ratio)
ANGLE
(deg)
s12
MAGNITUDE
(ratio)
50
100
200
300
400
500
600
700
800
900
1 000
0.986
0.984
0.974
0.960
0.953
0.933
0.915
0.894
0.879
0.863
0.838
−3.7
−7.4
−14.6
−21.8
−28.7
−35.3
−41.9
−47.8
−53.5
−59.5
−65.0
2.478
2.480
2.440
2.400
2.371
2.306
2.255
2.183
2.131
2.080
1.999
174.7
170.3
160.6
151.4
141.9
132.7
123.6
115.3
107.2
98.2
89.7
0.001
0.001
0.002
0.002
0.003
0.003
0.004
0.004
0.003
0.003
0.003
ANGLE
(deg)
72.2
80.9
82.7
79.9
77.7
77.1
77.1
79.3
83.9
95.1
115.8
s22
MAGNITUDE
(ratio)
1.000
1.000
0.997
0.996
0.994
0.991
0.989
0.986
0.984
0.982
0.980
ANGLE
(deg)
−1.6
−3.5
−6.6
−9.7
−12.8
−15.8
−18.7
−21.7
−24.6
−27.5
−30.4
Table 4 Noise data: VDS = 12 V; VG2-S = 4 V; ID = 10 mA
f
(MHz)
Fmin
(dB)
Γopt
(ratio)
800
2.00
0.66
(deg)
43.3
rn
0.97
Rev. 02 - 13 November 2007
12 of 15
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