BDV65 Просмотр технического описания (PDF) - Power Innovations Ltd
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BDV65 Datasheet PDF : 6 Pages
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BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
JUNE 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
BDV65
60
Collector-emitter
V(BR)CEO breakdown voltage
IC = 30 mA
IB = 0
(see Note 4)
BDV65A
80
BDV65B
100
BDV65C
120
VCB = 30 V
IB = 0
BDV65
2
ICEO
Collector-emitter
cut-off current
VCB = 40 V
VCB = 50 V
IB = 0
IB = 0
BDV65A
2
BDV65B
2
VCB = 60 V
IB = 0
BDV65C
2
VCB = 60 V
IE = 0
BDV65
0.4
VCB = 80 V
IE = 0
BDV65A
0.4
VCB = 100 V
IE = 0
BDV65B
0.4
ICBO
Collector cut-off
current
VCB = 120 V
VCB = 30 V
IE = 0
IE = 0
TC = 150°C
BDV65C
BDV65
0.4
2
VCB = 40 V
IE = 0
TC = 150°C
BDV65A
2
VCB = 50 V
IE = 0
TC = 150°C
BDV65B
2
VCB = 60 V
IE = 0
TC = 150°C
BDV65C
2
Emitter cut-off
IEBO current
VEB = 5 V
IC = 0
5
Forward current
hFE
transfer ratio
VCE = 4 V
IC = 5 A
(see Notes 4 and 5)
1000
Collector-emitter
VCE(sat) saturation voltage
IB = 20 mA IC = 5 A
(see Notes 4 and 5)
2
Base-emitter
VBE
voltage
VCE = 4 V
IC = 5 A
(see Notes 4 and 5)
2.5
Parallel diode
VEC forward voltage
IE = 10 A
IB = 0
(see Notes 4 and 5)
3.5
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1 °C/W
35.7 °C/W
PRODUCT INFORMATION
2
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