BDV65C Просмотр технического описания (PDF) - Power Innovations Ltd
Номер в каталоге
Компоненты Описание
производитель
BDV65C Datasheet PDF : 6 Pages
| |||
Copyright © 1997, Power Innovations Limited, UK
BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
JUNE 1993 - REVISED MARCH 1997
q Designed for Complementary Use with
BDV64, BDV64A, BDV64B and BDV64C
SOT-93 PACKAGE
(TOP VIEW)
q 125 W at 25°C Case Temperature
B
1
q 12 A Continuous Collector Current
q Minimum hFE of 1000 at 4 V, 5 A
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
NOTES: 1. This value applies for tp ≤ 0.1 ms, duty cycle ≤ 10%
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Ptot
Tj
Tstg
TL
VALUE
60
80
100
120
60
80
100
120
5
12
15
0.5
125
3.5
-65 to +150
-65 to +150
260
UNIT
V
V
V
A
A
A
W
W
°C
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
Share Link: 