BD82000FVJ-E2 Просмотр технического описания (PDF) - ROHM Semiconductor
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производитель
BD82000FVJ-E2 Datasheet PDF : 17 Pages
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BD82000FVJ, BD82001FVJ
●Measurement Circuit
VIN
A
1µF
GND
OUT
IN
OUT
IN
OUT
VEN(V/EN)
EN(/EN) /OC
Operating current
Inrush current
Technical Note
VIN
A
1µF
GND
OUT
IN
OUT
IN
OUT
VEN(V/EN)
EN(/EN) /OC
VIN
10kΩ
RL
CL
EN, /EN input voltage, Output rise, fall time
VIN
1µF
VEN(V/EN)
GND
OUT
IN
OUT
IN
OUT
EN(/EN) /OC
VIN
10kΩ
A
CL
IOUT
VIN
VIN
I/OC
1µF
GND
OUT
IN
OUT
IN
OUT
VEN(V/EN)
EN(/EN) /OC
On-resistance
Over-current detection
/OC output low voltage
●Timing diagram
○BD82000FVJ
Fig.1 Measurement circuit
○BD82001FVJ
VOUT
TON1
90%
TOFF1
90%
VOUT
TON1
90%
TOFF1
90%
10%
TON2
TOFF2
10%
TON2
TOFF2
V/EN
50%
50%
VEN
50%
50%
Fig.2 Timing diagram
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© 2011 ROHM Co., Ltd. All rights reserved.
5/16
2011.05 - Rev.B
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