BD311 Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

BD311

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

BD311

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0

VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A

VBEsat

Base-emitter saturation voltage

VBE

Base-emitter on voltage

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

IC=5A ;IB=0.5A

IC=5A ;VCE=4V

VCB=rated;IE=0

VEB=7V; IC=0

hFE-1

DC current gain

IC=5A ; VCE=4V

hFE-2

fT

DC current gain

Transition frequency

IC=10A ; VCE=4V

IC=0.5A ; VCE=10V,f=1MHz

MIN TYP. MAX UNIT

60

V

1.0

V

1.8

V

1.5

V

1.0 mA

1.0 mA

25

5

4

MHz

2

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