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BD13003B-A1(2018) Просмотр технического описания (PDF) - Secos Corporation.

Номер в каталоге
Компоненты Описание
производитель
BD13003B-A1
(Rev.:2018)
Secos
Secos Corporation. Secos
BD13003B-A1 Datasheet PDF : 2 Pages
1 2
Elektronische Bauelemente
BD13003B
1.5A, 700V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Power Switching Applications
TO-126
CLASSIFICATION OF tS
Product-Rank
Range
BD13003B-A1
2-2.5 (µs)
BD13003B-A2
2.5-3 (µs)
1Emitter
2Collector
3Base
MARKING
13003
=Solid dot
*Solid dot=Green molding compound device, if none, the normal device.
A
E
F
B
C
N
L
H
M
K
D
ORDER INFORMATION
Part Number
Type
J
Collector
2
G
BD13003B-
Lead (Pb)-free
1
BD13003B- -C Lead (Pb)-free and Halogen-free
Base
* =Rank
3
Emitter
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
7.40 7.80
2.50 2.90
10.60 11.00
15.30 15.70
3.70 3.90
3.90 4.10
2.29 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
1.10 1.50
0.45 0.60
0.66 0.86
2.10 2.30
1.17 1.37
3.00 3.20
Parameter
Symbol
Ratings
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
Junction and Storage Temperature
VCBO
700
V
VCEO
400
V
VEBO
9
V
IC
1.5
A
PC
1.5
W
TJ, TSTG
150, -55~150
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Collector-Base Breakdown Voltage
V(BR)CBO
700
-
-
Collector-Emitter Breakdown Voltage
V(BR)CEO
400
-
-
Emitter-Base Breakdown Voltage
V(BR)EBO
9
-
-
Collector Cut-off Current
ICBO
-
ICEO
-
-
1
-
0.5
Emitter Cut-off Current
DC Current Gain
IEBO
-
-
1
20
-
30
hFE
5
-
-
Collector-Emitter Saturation Voltage
VCE(sat)
-
-
0.6
Base-Emitter Saturation Voltage
Transition Frequency
VBE(sat)
-
fT
-
-
1.2
5
-
Fall time
Storage time
http://www.SeCoSGmbH.com/
14-Aug-2018 Rev. C
tF
-
0.5
-
tS
2
-
3
Unit
Test Conditions
V IC=5mA, IE=0
V IC=10mA, IB=0
V IE=2mA, IC=0
VCB=700V, IE=0
mA
VCE=400V, IB=0
mA VEB=9V, IC=0
VCE=5V, IC=0.5A
VCE=5V, IC=1.5A
V IC=1A, IB=0.25A
V IC=1A, IB=0.25A
MHz VCE=10V, IC=100mA, f=1MHz
µS IC=1A, IB1= -IB2=0.2A, VCC=100V
µS IC=250mA (UI9600)
Any changes of specification will not be informed individually.
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