BCV62 Просмотр технического описания (PDF) - Siemens AG

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BCV62

PNP Silicon Double Transistors

Siemens AG 

BCV 62

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics for transistor T1

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

Collector-base breakdown voltage

IC = 10 µA, IB = 0

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

Collector-base cutoff current

VCB = 30 V, IE = 0

VCB = 30 V, IE = 0, TA = 150 ˚C

DC current gain1)

IC = 0.1 mA, VCE = 5 V

IC = 2 mA, VCE = 5 V

BCV 62 A

BCV 62 B

BCV 62 C

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

Base-emitter saturation voltage1)

IC = 10 mA, IC = 0.5 mA

IC = 100 mA, IC = 5 mA

Base-emitter voltage

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

Symbol

Values

Unit

min. typ. max.

V(BR)CE0 30

–

–

V

V(BR)CB0 30

–

–

V(BR)EBS 6

–

–

ICB0

hFE

VCEsat

VBEsat

VBE

–

–

15 nA

–

–

5

µA

–

100 –

125 180 220

220 290 475

420 520 800

mV

–

75 300

–

250 650

–

700 –

–

850 –

600 650 750

–

–

820

1) Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group

2

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