BB501C Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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BB501C

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Hitachi -> Renesas Electronics 

BB501C

Drain Current vs. Gate Resistance

20

15

10

5

VDS = VG1 = 5 V

VG2S = 4 V

0

10

20

50

100

Gate Resistance R G (k Ω )

Power Gain vs.

Gate2 to Source Voltage

25

20

15

10

V DS = 5 V

5

R G = 47 kΩ

f = 900 MHz

0

1

2

3

4

Gate2 to Source Voltage V G2S (V)

Noise Figure vs.

Gate2 to Source Voltage

5

V DS = 5 V

4

R G = 47 kΩ

f = 900 MHz

3

2

1

1

2

3

4

Gate2 to Source Voltage V G2S (V)

Input Capacitance vs.

Gate2 to Source Voltage

4

3

2

1 V DS = 5 V

R G = 47 kΩ

f = 1 MHz

0

0

1

2

3

4

Gate2 to Source Voltage V G2S (V)

8

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