BAW62 Просмотр технического описания (PDF) - NXP Semiconductors.

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производитель

BAW62

High-speed diode

NXP Semiconductors. 

NXP Semiconductors

High-speed diode

Product data sheet

BAW62

FEATURES

• Hermetically sealed leaded glass

SOD27 (DO-35) package

• High switching speed: max. 4 ns

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

max. 75 V

• Repetitive peak forward current:

max. 450 mA.

APPLICATIONS

• High-speed switching

• Fast logic applications.

DESCRIPTION

The BAW62 is a high-speed switching diode fabricated in planar technology,

and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)

package.

handbook, halfpagke

a

MAM246

The diode is type branded.

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

VRRM

VR

IF

IFRM

IFSM

repetitive peak reverse voltage

continuous reverse voltage

continuous forward current

repetitive peak forward current

non-repetitive peak forward current

Ptot

total power dissipation

Tstg

storage temperature

Tj

junction temperature

CONDITIONS

see Fig.2; note 1

square wave; Tj = 25 °C prior to

surge; see Fig.4

t = 1 μs

t = 1 ms

t=1s

Tamb = 25 °C; note 1

Note

1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.

MIN.

−

−

−

−

MAX.

75

75

250

450

UNIT

V

V

mA

mA

−

4A

−

1A

−

0.5 A

−

350 mW

−65

+200 °C

−

200 °C

1996 Sep 17

2

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