NXP Semiconductors
BAP64LX
Silicon PIN diode
&G
I)
DDJ
U'
ȍ
DDJ
959
Fig 2.
f = 1 MHz; Tj = 25 C.
Diode capacitance as a function of reverse
voltage; typical values
,6/
G%
DDJ
,)P$
Fig 3.
f = 100 MHz; Tj = 25 C.
Forward resistance as a function of forward
current; typical values
/LQV
G%
DDJ
I0+]
Tamb = 25 C
Diode zero biased and inserted in series with a 50
stripline circuit
Fig 4. Isolation of the diode as a function of
frequency; typical values
I0+]
Tamb = 25 C
(1) IF = 100 mA
(2) IF = 10 mA
(3) IF = 1 mA
(4) IF = 0.5 mA
Diode inserted in series with a 50 stripline circuit and
biased via the analyzer Tee network
Fig 5. Insertion loss of the diode as a function of
frequency; typical values
BAP64LX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 12 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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