BAP63LX(2007) Просмотр технического описания (PDF) - NXP Semiconductors.

Номер в каталоге

Компоненты Описание

производитель

BAP63LX
(Rev.:2007)

Silicon PIN diode

NXP Semiconductors. 

NXP Semiconductors

Table 6. Characteristics …continued

Tamb = 25 °C unless otherwise specified.

Symbol Parameter

Conditions

Lins

insertion loss

see Figure 4; IF = 0.5 mA;

f = 900 MHz

f = 1800 MHz

f = 2450 MHz

Lins

insertion loss

see Figure 4; IF = 1 mA;

f = 900 MHz

f = 1800 MHz

f = 2450 MHz

Lins

insertion loss

see Figure 4; IF = 10 mA;

f = 900 MHz

f = 1800 MHz

f = 2450 MHz

Lins

insertion loss

see Figure 4; IF = 100 mA;

f = 900 MHz

f = 1800 MHz

f = 2450 MHz

τL

charge carrier life time when switched from IF = 10 mA to

IR = 6 mA; RL = 100 Ω; measured at

IR = 3 mA

LS

series inductance

IF = 100 mA; f = 100 MHz

BAP63LX

Silicon PIN diode

Min Typ Max Unit

-

0.20 -

dB

-

0.20 -

dB

-

0.21 -

dB

-

0.17 -

dB

-

0.17 -

dB

-

0.19 -

dB

-

0.12 -

dB

-

0.13 -

dB

-

0.15 -

dB

-

0.11 -

dB

-

0.11 -

dB

-

0.15 -

dB

-

0.32 -

µs

-

0.4

-

nH

BAP63LX_1

Product data sheet

Rev. 01 — 11 December 2007

© NXP B.V. 2007. All rights reserved.

3 of 8

Share Link: