BAP63LX(2007) Просмотр технического описания (PDF) - NXP Semiconductors.
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BAP63LX Datasheet PDF : 8 Pages
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NXP Semiconductors
BAP63LX
Silicon PIN diode
4. Marking
Table 3. Marking
Type number
BAP63LX
Marking code
LD
5. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
-
50
V
IF
forward current
-
100
mA
Ptot
total power dissipation
Tsp = 90 °C
-
135
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C
6. Thermal characteristics
Table 5.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
Typ
Unit
78
K/W
7. Characteristics
Table 6. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF
forward voltage
IF = 50 mA
IR
reverse current
VR = 20 V
Cd
diode capacitance
see Figure 1; f = 1 MHz;
VR = 0 V
VR = 1 V
VR = 20 V
rD
diode forward resistance see Figure 2; f = 100 MHz;
IF = 0.5 mA
IF = 1 mA
IF = 10 mA
IF = 100 mA
ISL
isolation
see Figure 3; VR = 0 V;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
BAP63LX_1
Product data sheet
Rev. 01 — 11 December 2007
Min Typ Max Unit
-
0.95 1.1
V
-
-
10
nA
-
0.34 -
pF
-
0.29 -
pF
-
0.24 0.30 pF
-
2.3
3.3
Ω
-
1.87 3.0
Ω
-
1.19 1.8
Ω
-
0.93 1.5
Ω
-
15.9 -
dB
-
10.5 -
dB
-
8.3
-
dB
© NXP B.V. 2007. All rights reserved.
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