BAP51LX Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
производитель
BAP51LX Datasheet PDF : 11 Pages
| |||
NXP Semiconductors
8 Graphical data
400
Cd
(fF)
300
001aag633
102
rD
(Ω)
10
200
1
100
BAP51LX
Silicon PIN diode
001aag634
0
0
4
8
12
16
20
VR (V)
f = 1 MHz; Tj = 25 °C.
Figure 2. Diode capacitance as a function of reverse
voltage (typical values)
0
Lins
(dB)
- 0.2
001aag636
(1)
(2)
(3)
- 0.4
(4)
- 0.6
- 0.8
10- 1
10- 1
1
10
102
IF (mA)
f = 100 MHz; Tj = 25 °C.
Figure 3. Forward resistance as a function of forward
current (typical values)
0
001aag635
ISL
(dB)
- 10
- 20
- 30
- 1.0
0
1000
2000
3000
f (MHz)
Diode inserted in series with a 50 Ω strip line circuit and
biased via the analyzer T-network; Tamb = 25 °C.
(1) IF = 100 mA
(2) IF = 10 mA
(3) IF = 1 mA
(4) IF = 0.5 mA
Figure 4. Insertion loss of the diode as a function of
frequency (typical values)
- 40
0
1000
2000
3000
f (MHz)
Diode zero biased and inserted in series with a 50 Ω strip
line circuit; Tamb = 25 °C
Figure 5. Isolation of the diode as a function of
frequency (typical values)
BAP51LX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 November 2018
© NXP B.V. 2019. All rights reserved.
6 / 11
Share Link: 