BAP50LX Просмотр технического описания (PDF) - NXP Semiconductors.
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BAP50LX Datasheet PDF : 10 Pages
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NXP Semiconductors
BAP50LX
Silicon PIN diode
8 Graphical data
500
Cd
(fF)
400
300
200
100
001aag629
103
rD
(Ω)
102
10
1
001aag630
0
0
4
8
12
16
20
VR (V)
f = 1 MHz; Tj = 25 °C.
Figure 2. Diode capacitance as a function of reverse
voltage (typical values)
0
Lins
(dB)
-1
001aag632
(1)
(2)
-2
(3)
10- 1
10- 1
1
10
102
IF (mA)
f = 100 MHz; Tj = 25 °C.
Figure 3. Forward resistance as a function of forward
current (typical values)
0
ISL
(dB)
-5
001aag631
- 10
-3
- 15
-4
- 20
-5
500
1000
1500
2000
2500 3000
f (MHz)
Diode inserted in series with a 50 Ω strip line circuit and
biased via the analyzer T-network. Tamb = 25 °C.
(1) IF = 10 mA
(2) IF = 1 mA
(3) IF = 0.5 mA
Figure 4. Insertion loss of the diode as a function of
frequency (typical values)
- 25
500
1000
1500
2000
2500 3000
f (MHz)
Diode zero biased and inserted in series with a 50 Ω strip
line circuit. Tamb = 25 °C.
Figure 5. Isolation of the diode in off-state as a function
of frequency (typical values)
BAP50LX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 November 2018
© NXP B.V. 2018. All rights reserved.
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