BAP50LX Просмотр технического описания (PDF) - NXP Semiconductors.

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производитель

BAP50LX

Silicon PIN diode

NXP Semiconductors. 

NXP Semiconductors

7 Characteristics

Table 6. Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol Parameter

VF

forward voltage

VR

reverse voltage

IR

reverse current

Cd

diode capacitance

rD

diode forward resistance

ISL

isolation

Lins

insertion loss

τL

charge carrier life time

LS

series inductance

BAP50LX

Silicon PIN diode

Conditions

Min Typ Max Unit

IF = 50 mA

IR = 10 μA

-

0.95 1.1

V

50

-

-

V

VR = 50 V

-

-

100

nA

f = 1 MHz (see Figure 2)

VR = 0 V

VR = 1 V

VR = 5 V

-

0.40 -

pF

-

0.28 0.55 pF

-

0.19 0.35 pF

f = 100 MHz (see Figure 3)

IF = 0.5 mA

IF = 1 mA

IF = 10 mA

-

26

40

Ω

-

14

25

Ω

-

3

5

Ω

VR = 0 V (see Figure 5)

f = 900 MHz

-

20.3 -

dB

f = 1800 MHz

-

17.9 -

dB

f = 2450 MHz

-

16.5 -

dB

(See Figure 4)

IF = 0.5 mA;

f = 900 MHz

-

1.82 -

dB

f = 1800 MHz

-

1.80 -

dB

f = 2450 MHz

-

1.81 -

dB

IF = 1 mA;

f = 900 MHz

-

1.07 -

dB

f = 1800 MHz

-

1.06 -

dB

f = 2450 MHz

-

1.08 -

dB

IF = 10 mA;

f = 900 MHz

-

0.25 -

dB

f = 1800 MHz

-

0.26 -

dB

f = 2450 MHz

-

0.27 -

dB

when switched from IF = 10 mA

-

1.0

-

μs

to IR = 6 mA; RL = 100 Ω;

measured at IR = 3 mA

IF = 100 mA; f = 100 MHz

-

0.4

-

nH

BAP50LX

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 3 — 26 November 2018

© NXP B.V. 2018. All rights reserved.

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