BAP55L Просмотр технического описания (PDF) - Philips Electronics
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BAP55L Datasheet PDF : 8 Pages
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Philips Semiconductors
BAP55L
Silicon PIN diode
4. Marking
Table 3: Marking
Type number
BAP55L
Marking code
E6
5. Limiting values
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
-
50
V
IF
forward current
-
100
mA
Ptot
total power dissipation
Ts = 90 °C
-
500
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C
6. Thermal characteristics
Table 5:
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to soldering point
Conditions
Typ
Unit
100
K/W
7. Characteristics
Table 6: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF
forward voltage
IF = 50 mA
IR
reverse current
VR = 20 V
VR = 50 V
Cd
diode capacitance f = 1 MHz; Figure 2
VR = 0 V
VR = 1 V
VR = 20 V
rD
diode forward
resistance
f = 100 MHz; Figure 1
IF = 0.5 mA
IF = 1 mA
IF = 10 mA
IF = 100 mA
Min Typ Max Unit
-
0.95 1.1 V
-
-
10 nA
-
-
0.1 µA
-
0.27 -
pF
-
0.23 -
pF
-
0.18 0.28 pF
-
3.4 4.5 Ω
-
2.3 3.3 Ω
-
0.8 1.2 Ω
-
0.4 0.7 Ω
9397 750 14811
Preliminary data sheet
Rev. 01 — 5 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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