H1A424M167 Просмотр технического описания (PDF) - Hynix Semiconductor

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H1A424M167

Image Signal Processor for Hyundai CMOS Image Sensor

Hynix Semiconductor 

Hyundai Electronics Industries Co., Ltd.

H1A424M167

9. Electrical Characteristics

9.1. Absolute Maximum Ratings

Symbol

Parameter

TAMB

TSTG

VDD

IODD

PTOT

VI

VO

Operating ambient temperature

Storage temperature

3.3V DC supply voltage

I/O pin voltage with respect to VSS

Total power dissipation

Input voltage

Output voltage

Min.

0

-40

3.0

-0.3

-

-0.3

-0.3

Max

70

125

3.6

VDD + 0.3

182

VDD + 0.3

VDD + 0.3

Unit

°C

°C

V

V

mW

V

V

9.2. DC Characteristics

Symbol

Parameter

Conditions Min Typ Max Unit

IDD

Supply current

all modes on -

39 55.2 mA

all modes off 13.5

-

-

mA

MCLK Master Clock

-

-

36

48 MHz

VIL

Low level input voltage

VIH

High level input voltage

VOL

Low level output voltage

VOH

High level output voltage

-

- 0.8Vmax V

2.1Vmin -

-

V

-

-

0.4

V

2.4

-

-

V

* Test condition

VDD = 3.3V, Temperature = 25 °C; Output load = 10pF; MCLK : 36MHz

unless otherwise specified.

1999 October 11

Page 42

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