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HI7131 Просмотр технического описания (PDF) - Intersil

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HI7131 Datasheet PDF : 21 Pages
First Prev 21
HI7131, HI7133
Die Characteristics
DIE DIMENSIONS:
127 mils x 149 mils
METALLIZATION:
Type: Al
Thickness: 10kÅ ±1kÅ
PASSIVATION:
Type: PSG Nitride
Thickness: 15kÅ ±3kÅ
WORST CASE CURRENT DENSITY:
9.1 x 104 A/cm2
Metallization Mask Layout
HI7131, HI7133
E2 F2 A2 B2 C2 D2 E1 G1 F1
A1
(14) (13) (12) (11) (10) (9) (8) (7) (6)
(5)
D3 (15)
B3 (16)
F3 (17)
E3 (18)
AB4 (19)
POL (20)
BP/GND (21)
(4) B1
(3) C1
(2) D1
(1) V+
(40) OSC 1
G3 (22)
A3 (23)
C3 (24)
G2 (25)
(39) OSC 2
(38) OSC 3
(37) TEST
V- (26)
(27)
(28) (29) (30)
(31)
(32) (33) (34) (35) (36)
INT
BUFF A/Z IN LO
IN HI COMM CREF- CREF+ LO HI
REF REF
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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