29LV160-70 Просмотр технического описания (PDF) - Alliance Semiconductor

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производитель

29LV160-70

3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM

Alliance Semiconductor 

$6/9

Š

Addresses

(Word Mode)

31h

32h

33h

34h

35h

36h

37h

38h

39h

3Ah

3Bh

3Ch

Addresses

(Byte Mode)

62h

64h

66h

68h

6Ah

6Ch

6Eh

70h

72h

74h

76h

78h

Data

0001h

0000h

0020h

0000h

0000h

0000h

0080h

0000h

001Eh

0000h

0000h

0001h

Description

Erase block region 2 information

Erase block region 3 information

Erase block region 4 information

3ULPDU\ 9HQGRU6SHFLILF ([WHQGHG 4XHU\

Addresses Addresses

(Word Mode) (Byte Mode) Data

Description

40h

80h

0050h

41h

82h

0052h Query-unique ASCII string (PRI)

42h

84h

0049h

43h

86h

0031h Major version number, ASCII

44h

88h

0030h Minor version number, ASCII

45h

8Ah

0000h Address sensitive unlock, 0 = required, 1 = not required

46h

8Ch

0002h Erase suspend, 0 = not supported, 1 = to read only, 2 = to read and write

47h

8Eh

0001h Sector protect, 0 = not supported, X = number of sectors in per group

48h

90h

0001h Sector temporary unprotect, 00 = not supported, 01 = supported

49h

92h

0004h Sector protect/unprotect scheme

4Ah

94h

0000h Simultaneous operation, 00 = not supported, 01 = supported

4Bh

96h

0000h Burst mode type, 00 = not supported , 01 = supported

4Ch

98h

0000h Page mode type, 00 = not supported, 01 = 4 word page, 02 = 8 word page

8/30/01; V.0.9.5

$OOLDQFH 6HPLFRQGXFWRU

P. 13 of 29

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