DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

APW7085KI-TRG Просмотр технического описания (PDF) - Anpec Electronics

Номер в каталоге
Компоненты Описание
производитель
APW7085KI-TRG Datasheet PDF : 24 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
APW7085
Electrical Characteristics (Cont.)
Refer to the typical application circuits. These specifications apply over VIN=12V, VOUT=3.3V and TA= -40 ~ 85oC, unless
otherwise specified. VCC is regulated by an internal regulator. Typical values are at TA=25oC.
Symbol
Parameter
Test Conditions
APW7085
Unit
Min. Typ. Max.
POWER-ON-RESET (POR) AND LOCKOUT VOLTAGE THRESHOLDS (CONT.)
VIN-to-UGND Lockout Voltage
Threshold
VVIN-UGND rising
-
3.5
-
V
VIN-to-UGND Lockout Hysteresis
-
0.2
-
V
REFERENCE VOLTAGE
VREF Reference Voltage
Output Voltage Accuracy
Line Regulation
TJ = 25oC, IOUT=0A, VIN=12V
TJ = -40 ~ 125oC, IOUT = 0 ~ 2A,
VIN = 4.5 ~ 26V
VIN = 4.5V to 26V, IOUT = 0A
-
0.8
-
V
-1.0
-
+1.0
%
-2.5
-
+2.5
-
0.36
-
%
Load Regulation
OSCILLATOR AND DUTY
IOUT = 0 ~ 2A
-
0.4
-
%
FOSC
Free Running Frequency
Foldback Frequency
VIN = 4.5 ~ 26V
VFB = 0V
340
380
420
kHz
-
80
-
kHz
Maximum Converter’s Duty Cycle
-
93
-
%
Minimum Pulse Width of LX
VIN = 4.5 ~ 26V
-
200
-
ns
CURRENT-MODE PWM CONVERTER
Gm Error Amplifier Transconductance
-
400
-
µA/V
Error Amplifier DC Gain
COMP = Open
60
80
-
dB
Current-Sense Resistance
-
0.2
-
P-Channel Power MOSFET
Resistance
TJ=25oC
-
100
140
m
PROTECTIONS
ILIM
P-Channel Power MOSFET
Current-limit
Peak Current
3
4
5
A
VUV FB Under-Voltage Threshold
FB Under-Voltage Hysteresis
VFB falling
66
70
74
%
-
40
-
mV
FB Under-Voltage Debounce
TOTP Over-Temperature Trip Point
Over-Temperature Hysteresis
-
2
-
µs
-
150
-
oC
-
50
-
oC
SOFT-START, ENABLE AND INPUT CURRENTS
tSS
Soft-Start Interval
Preceding Delay before Soft-Start
9
10.8
12
ms
9
10.8
12
ms
EN Shutdown Voltage Threshold
VEN falling, VIN = 4 ~ 26V
-
-
0.8
V
EN Enable Voltage Threshold
VEN rising, VIN = 4 ~ 26V
2.1
-
-
V
EN Pin Clamped Voltage
P-Channel Power MOSFET
Leakage Current
IEN=10mA
VEN = 0V, VLX = 0V, VIN = 26V
12
-
17
V
-
-
4
µA
Copyright © ANPEC Electronics Corp.
4
Rev. A.7 - Sep., 2010
www.anpec.com.tw

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]