HM1-6516B-9 Просмотр технического описания (PDF) - Intersil
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HM1-6516B-9 Datasheet PDF : 6 Pages
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HM-6516
Absolute Maximum Ratings
Thermal Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V
Input or Output Voltage Applied for all Grades . . . . . . .GND -0.3V to
VCC +0.3V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Operating Conditions
Thermal Resistance
θJA
CERDIP Package . . . . . . . . . . . . . . . . 48oC/W
θJC
8oC/W
CLCC Package . . . . . . . . . . . . . . . . . . 66oC/W
12oC/W
Maximum Storage Temperature Range . . . . . . . . .-65oC to +150oC
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +175oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300oC
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Ranges:
HM-6516B-9, HM-6516-9 . . . . . . . . . . . . . . . . . . . -40oC to +85oC
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25953 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DC Electrical Specifications VCC = 5V ±10%; TA = -40oC to +85oC (HM-6516B-9, HM-6516-9)
LIMITS
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
ICCSB Standby Supply Current
-
50
µA
IO = 0mA, VI = VCC or GND,
VCC = 5.5V, HM-6516B-9
-
100
µA
IO = 0mA, VI = VCC or GND,
HM-6516-9
ICCOP Operating Supply Current (Note 1)
ICCDR Data Retention Supply Current
VCCDR Data Retention Supply Voltage
-
10
mA
f = 1MHz, IO = 0mA, G = VCC, VCC =
5.5V, VI = VCC or GND
-
25
µA
VCC = 2.0V, IO = 0mA, VI = VCC or
GND, E = VCC, HM-6516B-9
-
50
µA
VCC = 2.0V, IO = 0mA, VI = VCC or
GND, E = VCC, HM-6516-9
2.0
-
V
II
IIOZ
VIL
VIH
VOL
VOH1
VOH2
Input Leakage Current
Input/Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output High Voltage (Note 2)
-1.0
+1.0
-1.0
+1.0
-0.3
0.8
2.4
VCC +0.3
-
0.4
2.4
-
VCC -0.4
-
µA
VI = VCC or GND, VCC = 5.5V
µA
VIO = VCC or GND, VCC = 5.5V
V
VCC = 4.5V
V
VCC = 5.5V
V
IO = 3.2mA, VCC = 4.5V
V
IO = -1.0mA, VCC = 4.5V
V
IO = -100µA, VCC = 4.5V
Capacitance TA = +25oC
SYMBOL
PARAMETER
CI
Input Capacitance (Note 2)
CIO
Input/Output Capacitance (Note 2)
NOTES:
1. Typical derating 5mA/MHz increase in ICCOP.
2. Tested at initial design and after major design changes.
MAX
8
10
UNITS
pF
pF
TEST CONDITIONS
f = 1MHz, All measurements are
referenced to device GND
6-3
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