AP2213M-3.0E1 Просмотр технического описания (PDF) - BCD Semiconductor
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производитель
AP2213M-3.0E1 Datasheet PDF : 22 Pages
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500mA LOW NOISE LDO REGULATOR
Typical Performance Characteristics (Continued)
Data Sheet
AP2213
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
TO-252-2(1) Package
No Heatsink
50
75
100
125
150
Ambient Temperature (oC)
Figure 16. Power Dissipation vs. Ambient Temperature
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
SOIC-8 Package
No Heatsink
50
75
100
125
150
Ambient Temperature (oC)
Figure 17. Power Dissipation vs. Ambient Temperature
1000
C =1µF
OUT
100
No Bypass Capacitor
10
1
Stable Area
0.1
0.01
0
50 100 150 200 250 300 350 400 450 500
Output Current (mA)
Figure 18. ESR vs. Output Current
1000
C =2.2µF
OUT
No Bypass Capacitor
100
10
1
Stable Area
0.1
0.01
0
50 100 150 200 250 300 350 400 450 500
Output Current (mA)
Figure 19. ESR vs. Output Current
Nov. 2009 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
15
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