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2213M-3.3E1(2007) Просмотр технического описания (PDF) - BCD Semiconductor

Номер в каталоге
Компоненты Описание
производитель
2213M-3.3E1
(Rev.:2007)
BCDSEMI
BCD Semiconductor BCDSEMI
2213M-3.3E1 Datasheet PDF : 21 Pages
First Prev 11 12 13 14 15 16 17 18 19 20
500mA LOW NOISE LDO REGULATOR
Typical Performance Characteristics
Data Sheet
AP2213
2.502
2.500
2.498
2.496
2.494
2.492
2.490
2.488
2.486
2.484
-60 -40 -20
AP2213-2.5
V =3.5V, I =10mA
IN
OUT
C =1µF, C =2.2µF
IN
OUT
0 20 40 60 80
Junction Temperature (oC)
100 120 140
Figure 4. Output Voltage vs. Junction Temperature
850
800
750
700
650
600
550
500
450
400
350
300
250
200
150
100
50
-60
I =50mA
OUT
I =100mA
OUT
I =150mA
OUT
I =300mA
OUT
I =500mA
OUT
-40 -20 0
CIN=1µF, COUT=2.2µF
20 40 60 80 100 120 140
Junction Temperature (oC)
Figure 5. Dropout Voltage vs. Junction Temperature
10
9
T =25oC
A
8
C =1µF, C =2.2µF
IN
OUT
7
6
5
4
3
2
1
0
0
100
200
300
400
500
Output Current (mA)
20
18
AP2213-2.5
VIN=3.5V, CIN=1µF, COUT=2.2µF
16
14
12
10
I =50mA
OUT
I =100mA
OUT
I =150mA
OUT
I =300mA
OUT
I =500mA
OUT
8
6
4
2
0
-60 -40 -20
0 20 40 60 80 100 120 140
Junction Temperature (0C)
Figure 6. Ground Pin Current vs. Output Current
Figure 7. Ground Pin Current vs. Junction Temperature
Mar. 2007 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
12

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