AP2210K-2.8TRE1 Просмотр технического описания (PDF) - BCD Semiconductor
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AP2210K-2.8TRE1 Datasheet PDF : 21 Pages
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300mA RF ULDO REGULATOR
Typical Performance Characteristics (Continued)
Data Sheet
AP2210
20
18
AP2210-3.0
V =4V, C =1.0µF
IN
IN
16
C =2.2µF, I =100µA
OUT
OUT
14
12
V =1.8V
EN
V =2.0V
EN
V =3.0V
EN
V =3.7V
EN
10
8
6
4
2
0
-50
-25
0
25
50
75
Junction Temperature (oC)
100
125
Figure 8. Enable Current vs. Junction Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
AP2210-3.0
C =1.0µF, C =2.2µF
IN
OUT
V =4V, I =100µA
IN
OUT
V =logic high
EN
V =logic low
EN
0
25
50
75
Junction Temperature (oC)
100
125
Figure 9. Enable Voltage vs. Junction Temperature
10
1
0.1
0.01
0.001
AP2210-3.0
V =4.5V, I =10mA
IN
OUT
C =1.0µF, C =2.2µF
IN
OUT
C =100pF
BYP
0.0001
10
100
1k
10k
100k
1M
10M
Frequency (Hz)
Figure 10. Output Noise vs. Frequency
5.5
5
AP2210-3.0
4.5
4
50
0
-50
-100
Time (20µs/Div)
Figure 11. Line Transient
(Conditions: VIN=4 to 5V, VEN=2V, IOUT=1mA,
COUT=2.2µF)
Jul. 2011 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
14
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