AP2127K-4.75G1 Просмотр технического описания (PDF) - BCD Semiconductor

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производитель

AP2127K-4.75G1

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

BCD Semiconductor 

Data Sheet

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Typical Performance Characteristics (Continued)

AP2127

VIN

500mV/div

VOUT

50mV/div

IOUT

200mA/div

VOUT

50mV/div

Figure 29. Line Transient

(Condition: CIN=COUT=1µF, IOUT=10mA,

VIN=2.5V to 3.3V, VOUT=1V)

Figure 30. Load Transient

(Condition: CIN=COUT=1µF,Sew Rate=20mA/µs,

VIN=2.5V, VOUT=1V, IOUT=10mA to 300mA)

IOUT

200mA/div

VOUT

50mV/div

IOUT

200mA/div

VOUT

50mV/div

Figure 31. Load Transient

(Condition: CIN=COUT=1µF, IOUT=10mA to 300mA,

VIN=4.3V, VOUT=3.3V)

Figure 32. Load Transient

(Condition: CIN=COUT=1µF,Sew Rate=20mA/µs,

VIN=6V, VOUT=5.2V, IOUT=10mA to 300mA)

Oct. 2009 Rev. 1.3

BCD Semiconductor Manufacturing Limited

14

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