AP2125N-3.0TRE1 Просмотр технического описания (PDF) - BCD Semiconductor

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AP2125N-3.0TRE1

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

BCD Semiconductor 

Data Sheet

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Typical Performance Characteristics

AP2125

1.90

1.88

1.86

1.84

1.82

1.80

1.78

1.76

1.74

1.72

1.70

0

AP2125-1.8

V =2.8V

IN

T =25oC

C

50

100

150

200

250

300

Output Current (mA)

Figure 4. Output Voltage vs. Output Current

3.50

3.48

3.46

3.44

3.42

3.40

3.38

3.36

3.34

3.32

3.30

0

AP2125-3.3

V =4.3V

IN

T =25oC

C

50

100

150

200

250

300

Output Current (mA)

Figure 5. Output Voltage vs. Output Current

400

360 AP2125-1.8

320

V =2.8V

IN

280

240

T =-40oC

C

200

T =25oC

C

160

T =85oC

C

120

80

40

0

0

30 60 90 120 150 180 210 240 270 300

Output Current (mA)

Figure 6. Dropout Voltage vs. Output Current

400

360 AP2125-3.3

320

V =4.3V

IN

280

240

T =-40oC

C

200

T =25oC

C

160

T =85oC

C

120

80

40

0

0

30 60 90 120 150 180 210 240 270 300

Output Current (mA)

Figure 7. Dropout Voltage vs. Output Current

May. 2010 Rev. 1. 4

BCD Semiconductor Manufacturing Limited

13

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