AON1634 Просмотр технического описания (PDF) - Unspecified

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AON1634

30V N-Channel MOSFET

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AON1634

30V N-Channel MOSFET

General Description

The AON1634 combines advanced trench MOSFET technology with a low resistance package to provide

extremely low R . DS(ON) This device is ideal for load switch and battery protection applications.

Features

VDS

ID (at VGS=10V)

RDS(ON) (at VGS =10V)

RDS(ON) (at VGS =4.5V)

RDS(ON) (at VGS =2.5V)

30V

4A

< 54mΩ

< 62mΩ

< 82mΩ

D

G

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain

Current G

TA=25°C

TA=70°C

ID

Pulsed Drain Current C

IDM

TA=25°C

Power Dissipation A TA=70°C

PD

Junction and Storage Temperature Range

TJ, TSTG

Maximum

30

±12

4

3

16

1.8

1.15

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Maximum Junction-to-Ambient A t ≤ 10s

Maximum Junction-to-Ambient A D Steady-State

RθJA

56

88

Max

70

110

Units

V

V

A

W

°C

Units

°C/W

°C/W

1/5

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