AOD444(2009) Просмотр технического описания (PDF) - Alpha and Omega Semiconductor

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производитель

AOD444
(Rev.:2009)

60V N-Channel MOSFET

Alpha and Omega Semiconductor 

AOD444/AOI444

60V N-Channel MOSFET

General Description

Product Summary

The AOD444/AOI444 combine advanced trench MOSFET

technology with a low resistance package to provide

extremely low RDS(ON). Those devices are suitable for use

in PWM, load switching and general purpose applications.

VDS

ID (at VGS=10V)

RDS(ON) (at VGS=10V)

RDS(ON) (at VGS = 4.5V)

100% UIS Tested

100% Rg Tested

60V

12A

< 60mΩ

< 85mΩ

TopView

D

TO252

DPAK

Bottom View

D

TopView

TO-251A

IPAK

Bottom View

D

S

G

G

S

S

D

G

G

G

D

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain

Current G

TC=25°C

TC=100°C

ID

Pulsed Drain Current C

IDM

Continuous Drain

TA=25°C

Current

TA=70°C

Avalanche Current C

Avalanche energy L=0.1mH C

IDSM

IAS, IAR

EAS, EAR

TC=25°C

Power Dissipation B TC=100°C

PD

TA=25°C

Power Dissipation A TA=70°C

PDSM

Junction and Storage Temperature Range

TJ, TSTG

Maximum

60

±20

12

9

30

4

3

19

18

20

10

2.1

1.3

-55 to 175

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient A

Maximum Junction-to-Ambient A D

Maximum Junction-to-Case

t ≤ 10s

Steady-State

Steady-State

Symbol

RθJA

RθJC

Typ

17.4

50

4

Max

30

60

7.5

D

S

Units

V

V

A

A

A

mJ

W

W

°C

Units

°C/W

°C/W

°C/W

Rev 0: Aug 2009

www.aosmd.com

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