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AO8801A

20V P-Channel MOSFET

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AO8801A

20V P-Channel MOSFET

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=-250µA, VGS=0V

-20

V

IDSS

Zero Gate Voltage Drain Current

VDS=-20V, VGS=0V

TJ=55°C

-1

µA

-5

IGSS

Gate-Body leakage current

VDS=0V, VGS= ±8V

±10 µA

VGS(th) Gate Threshold Voltage

VDS=VGS, ID=-250µΑ

-0.3 -0.57 -0.9 V

ID(ON)

On state drain current

VGS=-4.5V, VDS=-5V

-30

A

RDS(ON) Static Drain-Source On-Resistance

VGS=-4.5V, ID=-4.5A

VGS=-2.5V, ID=-4A

TJ=125°C

35

42

mΩ

49

59

43

54 mΩ

VGS=-1.8V, ID=-3A

54

68 mΩ

gFS

Forward Transconductance

VDS=-5V, ID=-4.5A

20

S

VSD

Diode Forward Voltage

IS=-1A,VGS=0V

-0.64 -1

V

IS

Maximum Body-Diode Continuous Current

-2

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=-10V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

600 751 905 pF

80 115 150 pF

48

80 115 pF

6

13

20

Ω

SWITCHING PARAMETERS

Qg

Total Gate Charge

7.4 9.3 11 nC

Qgs

Gate Source Charge

VGS=-4.5V, VDS=-10V, ID=-4.5A 0.8

1

1.2 nC

Qgd

Gate Drain Charge

1.3 2.2 3.1 nC

tD(on)

Turn-On DelayTime

13

ns

tr

Turn-On Rise Time

VGS=-4.5V, VDS=-10V, RL=2.2Ω,

9

ns

tD(off)

Turn-Off DelayTime

RGEN=3Ω

19

ns

tf

Turn-Off Fall Time

29

ns

trr

Body Diode Reverse Recovery Time IF=-4.5A, dI/dt=500A/µs

20

26

32

ns

Qrr

Body Diode Reverse Recovery Charge IF=-4.5A, dI/dt=500A/µs

40

51

62

nC

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialTJ=25°C.

D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with

2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

2/5

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