AO4404 Просмотр технического описания (PDF) - Alpha and Omega Semiconductor

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AO4404

N-Channel Enhancement Mode Field Effect Transistor

Alpha and Omega Semiconductor 

AO4404

N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO4404/L uses advanced trench technology to

provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a load switch or in PWM

applications. The source leads are separated to allow

a Kelvin connection to the source, which may be used

to bypass the source inductance. AO4404 and

AO4404L are electrically identical.

-RoHS Compliant

-AO4404L is Halogen Free

Features

VDS (V) = 30V

ID = 8.5A (VGS = 10V)

RDS(ON) < 24mΩ (VGS = 10V)

RDS(ON) < 30mΩ (VGS = 4.5V)

RDS(ON) < 48mΩ (VGS = 2.5V)

UIS TESTED!

Rg,Ciss,Coss,Crss Tested

S

D

S

D

S

D

G

D

SOIC-8

D

G

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain TA=25°C

Current AF

TA=70°C

ID

Pulsed Drain Current B

IDM

Power Dissipation

TA=25°C

TA=70°C

PD

Avalanche Current B

IAR

Repetitive avalanche energy 0.3mH B

EAR

Junction and Storage Temperature Range TJ, TSTG

Maximum

30

±12

8.5

7.1

60

3

2.1

15

34

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Maximum Junction-to-Ambient AF

Maximum Junction-to-Ambient A

t ≤ 10s

Steady-State

RθJA

31

59

40

75

Maximum Junction-to-Lead C

Steady-State

RθJL

16

24

Units

V

V

A

W

A

mJ

°C

Units

°C/W

°C/W

°C/W

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

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