AN726 Просмотр технического описания (PDF) - Silicon Laboratories
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AN726 Datasheet PDF : 28 Pages
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AN726
6.4. Alternate High Power Configuration
The Revision 1.0 hardware uses a half-bridge configuration shown in Figure 22. This configuration can lead to
higher distortion. Figure 23 illustrates an alternate full-bridge high-power output network. The diode and RC circuits
on the MOSFET gates ensure that the two devices will not both be conducting simultaneously. The value of these
components should be tuned for the gate capacitance of the FETs.
placed as close to the
VIOHD drivers as possible
placed as close to the
speaker connectors as
possible
PB4.0 (R+)
L
C
FB
Cg
CB
VIOHD
PB4.1 (R-)
L
C
FB
Cg
Figure 23. Full-Bridge Class-D Output Network—External MOSFETs
Rev. 0.1
21
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