AM29LV200T-90REC Просмотр технического описания (PDF) - Advanced Micro Devices

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производитель

AM29LV200T-90REC

2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

Advanced Micro Devices 

PRELIMINARY

DC CHARACTERISTICS

CMOS Compatible

Parameter

Description

Test Conditions

Min

Typ

ILI

Input Load Current

VIN = VSS to VCC,

VCC = VCC max

ILIT

A9 Input Load Current

VCC = VCC max; A9 = 12.5 V

ILO

Output Leakage Current

VOUT = VSS to VCC,

VCC = VCC max

CE# = VIL, OE# = VIH, 5 MHz

10

ICC1

VCC Active Read Current

(Note 1)

Byte Mode

1 MHz

CE# = VIL, OE# = VIH, 5 MHz

2

9

Word Mode

1 MHz

2

ICC2

VCC Active Write Current

(Notes 2 and 4)

CE# = VIL, OE# = VIH

20

ICC3

VCC Standby Current

VCC = VCC max;

CE#, RESET# = VCC±0.3 V

ICC4

VCC Standby Current During

Reset

VCC = VCC max;

RESET# = VSS ± 0.3 V

ICC5

Automatic Sleep Mode (Note 3)

VIH = VCC ± 0.3 V;

VIL = VSS ± 0.3 V

VIL

Input Low Voltage

VIH

Input High Voltage

VID

Voltage for Autoselect and

Temporary Sector Unprotect

VCC = 3.3 V

0.2

0.2

0.2

–0.5

0.7 x VCC

11.5

VOL

VOH1

VOH2

VLKO

Output Low Voltage

Output High Voltage

Low VCC Lock-Out Voltage

(Note 4)

IOL = 4.0 mA, VCC = VCC min

IOH = –2.0 mA, VCC = VCC min

IOH = –100 µA, VCC = VCC min

0.85 VCC

VCC–0.4

2.3

Notes:

1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. Typical VCC is 3.0 V.

2. ICC active while Embedded Erase or Embedded Program is in progress.

3. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns.

4. Not 100% tested.

Max

Unit

±1.0

µA

35

µA

±1.0

µA

16

4

mA

16

4

30

mA

5

µA

5

µA

5

µA

0.8

V

VCC + 0.3 V

12.5

V

0.45

V

V

2.5

V

21

Am29LV200

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