AM29LV017D Просмотр технического описания (PDF) - Advanced Micro Devices

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AM29LV017D

1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory

Advanced Micro Devices 

Am29LV017D

16 Megabit (2 M x 8-Bit)

CMOS 3.0 Volt-only Uniform Sector Flash Memory

This product has been retired and is not recommended for designs. For new and current designs, S29AL016D supersedes Am29LV017D and is the factory-recommended migration path.

Please refer to the S29AL016D datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

— 2.7 to 3.6 volt read and write operations for

battery-powered applications

■ Manufactured on 0.23 µm process technology

— Compatible with and replaces Am29LV017B

device

■ High performance

— Access times as fast as 70 ns

■ Ultra low power consumption (typical values at 5

MHz)

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 9 mA read current

— 15 mA program/erase current

■ Flexible sector architecture

— Thirty-two 64 Kbyte sectors

— Supports full chip erase

— Sector Protection features:

A hardware method of locking a sector to prevent

any program or erase operations within that

sector

Sectors can be locked in-system or via

programming equipment

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Unlock Bypass Program Command

— Reduces overall programming time when issuing

multiple program command sequences

■ Embedded Algorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ Minimum 1,000,000 write cycle guarantee

per sector

■ 20-year data retention at 125°C

— Reliable operation for the life of the system

■ Package option

— 48-ball FBGA

— 40-pin TSOP

■ CFI (Common Flash Interface) compliant

— Provides device-specific information to the

system, allowing host software to easily

reconfigure for different Flash devices

■ Compatibility with JEDEC standards

— Pinout and software compatible with single-

power supply Flash

— Superior inadvertent write protection

■ Data# Polling and toggle bits

— Provides a software method of detecting program

or erase operation completion

■ Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting

program or erase cycle completion

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data

■ Command sequence optimized for mass storage

— Specific address not required for unlock cycles

This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Publication# 21415 Rev: E Amendment/+3

Issue Date: June 13, 2005

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