ALD110902 Просмотр технического описания (PDF) - Advanced Linear Devices
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ALD110902
Advanced Linear Devices
ALD110902 Datasheet PDF : 11 Pages
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ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, VDS
Gate-Source voltage, VGS
Power dissipation
10.6V
10.6V
500 mW
Operating temperature range SCL, PCL, SAL, PAL package
0°C to +70°C
Storage temperature range
-65°C to +150°C
Lead temperature, 10 seconds
+260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V V- = GND TA = 25°C unless otherwise specified
Parameter
Gate Threshold Voltage
Offset Voltage
VGS(th)1-VGS(th)2
Offset VoltageTempco
GateThreshold Voltage Tempco
Symbol
VGS(th)
VOS
TCVOS
TCVGS(th)
On Drain Current
IDS (ON)
Forward Transconductance
GFS
Transconductance Mismatch
Output Conductance
∆GFS
GOS
Drain Source On Resistance
RDS (ON)
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current1
∆RDS (ON)
BVDSX
IDS (OFF)
Gate Leakage Current1
IGSS
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
CISS
CRSS
ton
toff
Notes: 1 Consists of junction leakage currents
ALD110802/ALD110902
Min
Typ
Max
0.18
0.20
0.22
2
10
5
-1.7
0.0
+1.6
12.0
3.0
1.4
1.8
68
500
0.5
10
10
400
4
3
200
1
2.5
0.1
10
10
60
Unit
V
mV
Test Conditions
IDS = 1µA, VDS = 0.1V
µV/ °C
mV/ °C
mA
VDS1 = VDS2
ID = 1µA, VDS = 0.1V
ID = 20µA, VDS = 0.1V
ID = 40µA, VDS = 0.1V
VGS = +9.7V, VDS = +5V
VGS = +4.2V, VDS = +5V
mmho
VGS = +4.2V
VDS = +9.2V
%
µmho
VGS = +4.2V
VDS = +9.2V
Ω
VDS = +0.1V
VGS = +4.2V
%
V
IDS = 1.0µA
VGS = -0.8V
pA
VGS = -0.8V, VDS =+5V
V- = -5V
nA
TA = 125°C
pA
VDS = 0V, VGS = 5V
nA
TA =125°C
pF
pF
ns
V+ = 5V, RL= 5KΩ
ns
V+ = 5V, RL= 5KΩ
dB
f = 100KHz
ALD110802/ALD110902
Advanced Linear Devices
2 of 11
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